Neuromorphic behaviors of N-type locally-active memristor

Owing to the advantages of high integration, low power consumption and locally active characteristics, locally-active memristor (LAM) has shown great potential applications in neuromorphic computing. To further investigate dynamics LAMs, a simple N-type LAM mathematical model is proposed this work. By analyzing its voltage-current characteristic small-signal equivalent circuit, neuron circuit based on designed, where variety behaviors are successfully simulated, such as “all-or-nothing” behavior, spikes, bursting, periodic oscillation, etc. Moreover, Hopf bifurcation theory numerical analysis method used study quantitatively. Then, an artificial tactile frequency characteristics presented by using topology. The simulation results show that when amplitude input signal lower than threshold, oscillation output positively correlated with intensity signal, reaches maximum value at threshold. above consistent those exciting state biological sensory system. Subsequently, if incentive continues increase, will gradually decrease, corresponding protective inhibition behavior. Finally, physical LAM, artificialneuron realized. experimental accord well theoreticalanalyses, manifesting practicability feasibility circuit.